Simulation of the transient characteristics of partially- and fully-depleted SOI MOSFETs

We present a numerical technique which employs a local-in-time initial guess for the transient simulation of SOI MOSFETs. Specifically, the goal of this work is to compute the transient drain current which exhibits overshoot. A critical factor in such computations is the choice of the initial guess at each time point after the gate ramp. Our numerical simulations have shown that the use of the previous time point solution as an initial guess in the Gummel iterations fails to predict the decay in the drain current from its maximum overshoot value. This difficulty is circumvented when the steady-state solution is used as a local-in-time initial guess. We use the diagonally implicit Runge-Kutta method for the time domain discretization. A fixed-point iteration technique is employed for the space domain iterations. To demonstrate the usefulness of the local-in-time method, numerical results of the transient drain current for various device parameters, such as the silicon film doping, silicon film thickness and back-gate bias are presented.