A numerical analysis for the small-signal response of the MOS capacitor

Simulation results for the small-signal sinusoidal steady-state response of the MOS capacitor using time perturbation analysis of the basic semiconductor equations are presented. The effects of interface and bulk trap dynamics are included. The model uses Fermi-Dirac statistics and Shockley-Read-Hall recombination to describe the traps. This analysis is an improvement over previous techniques since it can simulate the effect of trap dynamics on the small-signal sinusoidal steady-state response of a semiconductor device with arbitrary geometry, doping and trap distributions.